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| NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this device particularly suitable for car ignitions where current limiting is achieved desaturing the darlington. Features: D High Performance Electronic Ignition Darlington D High Ruggedness Applications: D Automotive Market Absolute Maximum Ratings: Collector-Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, Note 1 Collector Cutoff Current ICES ICEO Emitter Cutoff Current ON Characteristics (Note 1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Storage Time Fall Time VCE(sat) VBE(sat) hFE VF ts tf IC = 8A, IB = 150mA IC = 8A, IB = 150mA IC = 5A, VCE = 10V IF = 10A VCC = 12V, VBE = 0, LB = 7mH, IC = 7A, IB = 70mA, RBE = 47, Vclamp= 300V - - 300 - - - 1.09 1.77 - 1.43 15 0.5 1.8 2.2 - 2.8 - - V s s V V IEBO TJ = +25C TJ = +125C VCE = 500V, VBE = 0 450 - - - - - - - - - - 1 5 1 50 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit VCE = 450V, IB = 0 IC = 0, VEB = 5V Switching Characteristics (Switching Times on Inductive Load) Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%. .600 (15.24) .060 (1.52) .173 (4.4) C B .156 (3.96) Dia. B C E .550 (13.97) 800 50 C .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
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